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NVE receive patent for nanotech magnetothermal MRAM
Posted April 4th, 2007 by admin
Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current, to reduce the energy required to write data and allow reduction of the memory cell size while maintaining thermal stability. NVE is known for commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. MRAM is an integrated-circuit memory, fabricated with nanotechnology, that uses electron spin to store data. MRAM may have the potential to combine many of the best attributes of different types of semiconductor memories.
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